Modeling circuit of field effect transistor for symmetric modeling of electrostatic discharge characteristic, method of designing integrated circuit using the same and method of manufacturing integrated circuit using the same

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United States of America Patent

PATENT NO 11907635
SERIAL NO

17391458

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Abstract

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A modeling circuit of a field effect transistor includes a first field effect transistor, a first bipolar transistor, a second bipolar transistor and a substrate resistor. The first bipolar transistor has a collector electrode connected to a first node corresponding to a first electrode of the first field effect transistor, an emitter electrode connected to a second node corresponding to a second electrode of the first field effect transistor, and a base electrode. The second bipolar transistor has a collector electrode connected to the second node, an emitter electrode connected to the first node, and a base electrode connected to the base electrode of the first bipolar transistor. The substrate resistor is connected between the base electrodes of the first and second bipolar transistors and a first surface of a semiconductor substrate on which the first field effect transistor is formed.

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Patent Owner(s)

Patent OwnerAddress
SAMSUNG ELECTRONICS CO LTDSUWON-SI GYEONGGI-DO 16677

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Lee, Hyein Suwon-si, KR 4 0
Moon, Kiyoung Yongin-si, KR 3 39
Mun, Seongjin Bucheon-si, KR 2 0

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