Reducing resistance in source and drain regions of FinFETs
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United States of America Patent
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May 10, 2011
Grant Date -
Apr 16, 2009
app pub date -
Oct 16, 2007
filing date -
Oct 16, 2007
priority date (Note) -
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Abstract
A semiconductor structure includes a semiconductor fin on a top surface of a substrate, wherein the semiconductor fin includes a middle section having a first width; and a first and a second end section connected to opposite ends of the middle section, wherein the first and the second end sections each comprises at least a top portion having a second width greater than the first width. The semiconductor structure further includes a gate dielectric layer on a top surface and sidewalls of the middle section of the semiconductor fin; and a gate electrode on the gate dielectric layer.
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