Method of using an e-fuse device
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United States of America Patent
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Mar 6, 2007
Grant Date -
May 11, 2006
app pub date -
Nov 9, 2004
filing date -
Nov 9, 2004
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Abstract
A method of using an e-fuse device is provided. The e-fuse device includes a poly-fuse having one end connected to a source/drain region of a MOS transistor and the other end biased to a voltage (V.sub.FS). In operation, a gate of the MOS transistor receives a step waveform pulse signal. The step waveform pulse signal encompasses a pre-heat voltage (V.sub.p) at a first level during time period (T.sub.1-T.sub.p) and a maximum input voltage (V.sub.IH) at a second level during time period (T.sub.p-T.sub.2). The pre-heat voltage (V.sub.p) is smaller than the maximum input voltage (V.sub.IH). The step waveform pulse signal is confined to a minimum input voltage (V.sub.IL) before T.sub.1 and after T.sub.2. Preferably, the time period (T.sub.1-T.sub.p) is longer than 5 .mu.s.
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