Method for fabricating a semiconductor device
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United States of America Patent
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Jun 21, 2005
Grant Date -
Jan 22, 2004
app pub date -
Nov 13, 2001
filing date -
Nov 22, 2000
priority date (Note) -
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Abstract
A process for fabricating a semiconductor device having, for example, a MISFET transistor, is provided which comprises the steps of (a) providing a partially fabricated semiconductor device comprising a substrate and a first and second polysilican layer insulatively spaced from the substrate by an insulating layer, the insulating layer having an opening therein which exposes the surface of the first polysilicon layer positioned below the second polysilicon layer and (b) exposing the partially fabricated semiconductor device to a noble gas halide to substantially remove the first polysilicon layer.
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