Method for high numerical aperture thru-slit source mask optimization
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United States of America Patent
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Nov 14, 2023
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N/A
app pub date -
Oct 3, 2019
filing date -
Oct 9, 2018
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Abstract
A method for source mask optimization with a lithographic projection apparatus. The method includes determining a multi-variable source mask optimization function using a plurality of tunable design variables for an illumination system of the lithographic projection apparatus, a projection optics of the lithographic projection apparatus to image a mask design layout onto a substrate, and the mask design layout. The multi-variable source mask optimization function may account for imaging variation across different positions in an exposure slit corresponding to different stripes of the mask design layout exposed by a same slit position of the exposure apparatus. The method includes iteratively adjusting the plurality of tunable design variables in the multi-variable source mask optimization function until a termination condition is satisfied.
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