Metal grid structure integrated with deep trench isolation structure

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United States of America Patent

PATENT NO 11557620
APP PUB NO 20220320163A1
SERIAL NO

17217937

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Abstract

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A high k passivation layer, an anti-reflective coating layer, and a buffer layer are disposed over semiconductor substrate including photodiodes formed therein. Trenches are etched into the semiconductor substrate through the buffer layer, anti-reflective coating layer, and the high k passivation layer in a grid-like pattern surrounding each of the photodiodes in the semiconductor substrate. Another high k passivation layer lines an interior of the trenches in the semiconductor substrate. An adhesive and barrier layer is deposited over the high k passivation layer that lines the interior of the trenches. A deep trench isolation (DTI) structure is formed with conductive material deposited into the trenches over the adhesive and barrier layer to fill the trenches. A grid structure is formed over the DTI structure and above a plane of the buffer layer. The grid structure is formed with the conductive material.

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Patent Owner(s)

  • OMNIVISION TECHNOLOGIES, INC.

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Mabuchi, Keiji Los Altos, US 307 3827
Mun, Seong Yeol Santa Clara, US 33 54
Zhu, Yibo Sunnyvale, US 23 152

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