Electronic device including a heterojunction region
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United States of America Patent
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Mar 5, 2013
Grant Date -
May 15, 2008
app pub date -
Nov 14, 2006
filing date -
Nov 14, 2006
priority date (Note) -
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Abstract
An electronic device can include a first transistor having a first channel region further including a heterojunction region that, in one aspect, is at most approximately 5 nm thick. In another aspect, the first transistor can include a p-channel transistor including a gate electrode having a work function mismatched with the associated channel region, and the heterojunction region can lie along a surface of a semiconductor layer closer to a substrate than an opposing surface of the substrate. The electronic device can also include an n-channel transistor, and the subthreshold carrier depth of the p-channel and n-channel transistors can have approximately a same value as compared to each other. A process of forming the electronic device can include forming a compound semiconductor layer having an energy band gap greater than approximately 1.2 eV.
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