Method of making a tungsten nitride barrier layer with improved adhesion and stability using a silicon layer
Number of patents in Portfolio can not be more than 2000
United States of America Patent
Stats
-
Dec 4, 2001
Grant Date -
N/A
app pub date -
Sep 30, 1999
filing date -
Sep 30, 1999
priority date (Note) -
In Force
status (Latency Note)
Importance
Abstract
Tungsten nitride adhesion to an underlying dielectric is enhanced by forming a thin layer of silicon over the dielectric before depositing the tungsten nitride. A twenty angstrom layer of amorphous silicon is formed over a silicon oxide dielectric. Tungsten nitride is formed over the silicon layer using a plasma enhanced chemical vapor deposition with tungsten hexafluoride and nitrogen. As the tungsten nitride is formed, the tungsten hexafluorine and nitrogen reacts with the amorphous silicon to produce an adhesion layer that includes silicon nitride and tungsten silicide.
First Claim
Family
International Classification(s)
Cited Art Landscape
Patent Citation Ranking
Advertisement
Advertisement
Advertisement
Recipient Email Address
Recipient Email Address
Comment
Recipient Email Address
Add to Portfolio(s)
To add this patent to one, or more, of your portfolios, simply click the add button.
This Patent is in these Portfolios:
Add to additional portfolios:
Last Refreshed On:
Changes done successfully