Method for fabricating a metallic oxide of high dielectric constant, metallic oxide of high dielectric constant, gate insulating film and semiconductor element
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United States of America Patent
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Apr 18, 2006
Grant Date -
Dec 23, 2004
app pub date -
Mar 24, 2004
filing date -
Jun 17, 2003
priority date (Note) -
Expired
status (Latency Note)
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Abstract
A given metallic oxide film is epitaxially grown on a substrate. Then, the substrate and the metallic oxide film are thermally treated to mix the constituent elements of the substrate with the constituent metallic oxide elements of the metallic oxide film and to form a metallic oxide film of high dielectric constant on the substrate through the mixing of the constituent elements.
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