Thin film transistor, method for fabricating the same and display device

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United States of America Patent

PATENT NO 7683367
APP PUB NO 20080001150A1
SERIAL NO

11644981

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ATTORNEY / AGENT: (SPONSORED)

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Abstract

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A method for fabricating a TFT on a substrate includes forming a gate electrode; forming a semiconductor layer insulated from the gate electrode and partially overlapped with the gate electrode; forming a gate insulating layer between the gate electrode and the semiconductor layer, the gate insulating layer including a sol-gel compound; and forming source and drain electrodes at both sides of the semiconductor layer.

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Patent Owner(s)

  • LG DISPLAY CO., LTD.

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Chae, Gee Sung Incheon-si, KR 104 845
Heo, Jae Seok Gunpo-si, KR 11 37
Jun, Woong Gi Anyang-si, KR 7 32

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