Solid-state imaging device and method of manufacturing the same
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United States of America Patent
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Jun 12, 2007
Grant Date -
Nov 25, 2004
app pub date -
May 20, 2004
filing date -
May 22, 2003
priority date (Note) -
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Abstract
The MOS type solid-state imaging device has plural pixels each of which comprises a photo-diode and a MOS transistor on a substrate. A gate electrode is formed on the channel dope layer formed in the surface of the p-type well layer. By ion implantation of n-type impurity ions via the gate electrode as the mask, the n-type source region and the drain region are formed in the region corresponding to the MOS transistor, and the n-type impurity region is also formed in the region corresponding to the photo-diode. In the well layer, a high impurity density region as a hole pocket is self-aligned to the gate electrode.
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