Fin-type field effect transistor device and manufacturing method thereof
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United States of America Patent
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Dec 27, 2016
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N/A
app pub date -
Feb 25, 2016
filing date -
Feb 25, 2016
priority date (Note) -
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Abstract
A fin-type field effect transistor device including a substrate, a gate stack structure, spacers and source and drain regions is described. The spacers includes first and second spacers and a first height of the first spacer is larger than a second height of the second spacer. A dielectric layer disposed on the gate stack structure includes a contact opening exposing the source and drain regions, the first and second spacers and a portion of the gate stack structure. A sheath structure is disposed within the contact opening and the sheath structure is in contact with the first and second spacers and the exposed portion of the gate stack structure without covering the source and drain regions. A metal connector is disposed within the sheath structure and connected to the source and drain regions.
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