Formation method for metal element, production method for semiconductor device, production method for electronic device, semiconductor device, electronic device, and electronic equipment
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United States of America Patent
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Jul 3, 2007
Grant Date -
Oct 14, 2004
app pub date -
Dec 29, 2003
filing date -
Jan 15, 2003
priority date (Note) -
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Abstract
A metal element formation method includes a seed layer formation step for forming a seed layer on a treatment surface of a substrate, and a plating formation step for forming a plating layer on the seed layer, wherein in the seed layer formation step, a liquid repellent section is formed on the treatment surface, and a liquid phase method is used to form the seed layer in a region outside the liquid repellent section.
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