Semiconductor device fabrication methods
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United States of America Patent
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Apr 21, 2015
Grant Date -
Aug 14, 2014
app pub date -
Mar 14, 2013
filing date -
Feb 8, 2013
priority date (Note) -
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Abstract
A semiconductor device includes a substrate having a first region and a second region, first and second gate electrodes disposed on the first and second regions, respectively, and first and second source/drain regions disposed on at least one side of the first and second gate electrodes, respectively. The device further includes first and second silicide regions in the first and second source/drain regions, respectively. A contact area between the first silicide region and the first source/drain region is differs in size from a contact area between the second silicide region and the second source/drain region. Methods of fabricating such devices are also provided.
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