Diverse transistor channel materials enabled by thin, inverse-graded, germanium-based layer

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United States of America Patent

PATENT NO 11404575
APP PUB NO 20200411691A1
SERIAL NO

16611921

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Abstract

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Techniques are disclosed for forming diverse transistor channel materials enabled by a thin, inverse-graded, germanium (Ge)-based layer. The thin, inverse-graded, Ge-based layer (e.g., having a thickness of at most 500 nm) can then serve as a template for the growth of compressively strained PMOS channel material and tensile strained NMOS channel material to achieve gains in hole and electron mobility, respectively, in the channel regions of the devices. Such a relatively thin Ge-based layer can be formed with suitable surface quality/relaxation levels due to the inverse grading of the Ge concentration in the layer, where the Ge concentration is relatively greatest near the substrate and relatively lowest near the overlying channel material layer. In addition to the inverse-graded Ge concentration, the Ge-based layer may be characterized by the nucleation, and predominant containment, of defects at/near the interface between the substrate and the Ge-based layer.

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Patent Owner(s)

  • INTEL CORP.

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Bomberger, Cory C Portland, US 16 14
Ghani, Tahir Portland, US 698 6999
Glass, Glenn A Portland, US 178 4433
Jambunathan, Karthik Hillsboro, US 49 249
Murthy, Anand S Portland, US 309 5611
Nam, Ju H Hillsboro, US 3 11

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