High speed threshold voltage and average surface doping measurements
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United States of America Patent
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Dec 2, 2003
Grant Date -
Sep 18, 2003
app pub date -
Mar 15, 2002
filing date -
Mar 15, 2002
priority date (Note) -
Expired
status (Latency Note)
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Abstract
A method for measuring threshold voltage and average surface doping concentration of a semiconductor wafer begins by exposing a measurement site to a high intensity light immediately before a measurement sweep begins. A CV measurement sweep is made with the voltage increasing to a maximum voltage, and the response of the semiconductor wafer to CV measurement sweep is recorded. When the voltage is at the maximum voltage, the light is turned off and the capacitance of the measurement site in the absence of light is measured until the capacitance reaches equilibrium. From the recorded response, the threshold voltage and the average surface doping concentration are determined.
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