Stencil mask for electron beam projection lithography and fabrication method
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United States of America Patent
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-
Dec 13, 2005
Grant Date -
Jan 31, 2002
app pub date -
Jul 2, 2001
filing date -
Jun 30, 2000
priority date (Note) -
Expired
status (Latency Note)
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Abstract
The present invention relates to a stencil mask for non-optical lithography and a method for fabricating such a mask. The disclosed stencil mask includes a frame for supporting the whole structure; a membrane disposed on the frame for equalizing stresses resulting from the electron beam; and a scattering layer pattern disposed on the membrane for scattering the electron beam. The scattering layer pattern includes regions of varying thickness and/or scattering performance that permit the exposure to be adjusted for areas having greater or lesser pattern density. These adjustments can reduce defects resulting from proximity effects, improve the uniformity of critical features, and improve the yield and reliability of the resulting devices.
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