Semiconductor device having two-layered charge storage electrode
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United States of America Patent
Stats
-
Sep 2, 2008
Grant Date -
Jul 27, 2006
app pub date -
Mar 14, 2006
filing date -
Oct 30, 2000
priority date (Note) -
Expired
status (Latency Note)
Importance
Abstract
A first insulation film, a first conductor film, and a cap are sequentially formed on a semiconductor substrate. The first insulation film, the first conductor film, and the cap, and the substrate are etched in the same pattern. A second insulation film is placed in that etched pattern. The cap is removed. A second conductor film is formed on the side face of the second insulation film.
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