High temperature downhole tool
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United States of America Patent
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Dec 29, 2009
Grant Date -
Feb 19, 2009
app pub date -
Aug 13, 2007
filing date -
Aug 13, 2007
priority date (Note) -
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status (Latency Note)
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Abstract
Apparatus and method for estimating a downhole parameter include a high-gain semiconductor device having a plurality of semiconductor layers forming an active region, the active region having a bandgap offset that provides device operation through at least the temperature environment of a downhole location, the high-gain semiconductor device being used at least in part to estimate a downhole parameter.
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