Group III nitride composite substrate and method for manufacturing the same, and method for manufacturing group III nitride semiconductor device

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United States of America Patent

PATENT NO 11094537
APP PUB NO 20200176305A1
SERIAL NO

16787700

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Abstract

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Provided are a group III nitride composite substrate having a low sheet resistance and produced with a high yield, and a method for manufacturing the same, as well as a method for manufacturing a group III nitride semiconductor device using the group III nitride composite substrate. A group III nitride composite substrate includes a group III nitride film and a support substrate formed from a material different in chemical composition from the group III nitride film. The group III nitride film is joined to the support substrate in one of a direct manner and an indirect manner. The group III nitride film has a thickness of 10 μm or more. A sheet resistance of a group III-nitride-film-side main surface is 200 Ω/sq or less.

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Patent Owner(s)

  • SUMITOMO ELECTRIC INDUSTRIES, LTD.

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Hachigo, Akihiro Itami, JP 63 596
Hiromura, Yuki Itami, JP 5 34
Ishibashi, Keiji Itami, JP 124 1985
Matsumoto, Naoki Itami, JP 295 7999
Mikami, Hidenori Itami, JP 13 84
Nakahata, Seiji Itami, JP 125 2512
Nakanishi, Fumitake Itami, JP 21 137
Seki, Yuki Itami, JP 13 57
Uematsu, Koji Itami, JP 84 2018
Yamamoto, Yoshiyuki Itami, JP 122 1426
Yanagisawa, Takuya Itami, JP 10 27
Yoshizumi, Yusuke Itami, JP 100 2025

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