CMOS devices with a single work function gate electrode and method of fabrication
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United States of America Patent
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Mar 8, 2011
Grant Date -
May 17, 2007
app pub date -
Jan 3, 2007
filing date -
Sep 28, 2005
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Abstract
Described herein are a device utilizing a gate electrode material with a single work function for both the pMOS and nMOS transistors where the magnitude of the transistor threshold voltages is modified by semiconductor band engineering and article made thereby. Further described herein are methods of fabricating a device formed of complementary (pMOS and nMOS) transistors having semiconductor channel regions which have been band gap engineered to achieve a low threshold voltage.
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