Azimuthal scanning of a structure formed on a semiconductor wafer

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United States of America Patent

PATENT NO 7224471
APP PUB NO 20050088665A1
SERIAL NO

10696246

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Abstract

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A structure formed on a semiconductor wafer is examined by directing an incident beam at the structure at an incidence angle and a azimuth angle. The incident beam is scanned over a range of azimuth angles to obtain an azimuthal scan. The cross polarization components of diffracted beams are measured during the azimuthal scan.

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Patent Owner(s)

  • TOKYO ELECTRON LIMITED

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Bischoff, Joerg Illmenau, DE 28 558
Li, Shifang Pleasanton, CA 107 857
Niu, Xinhui Los Altos, CA 44 1438

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