Thin-film semiconductor element and method of producing same
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United States of America Patent
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Nov 2, 2004
Grant Date -
May 22, 2003
app pub date -
Oct 4, 2002
filing date -
Apr 4, 2000
priority date (Note) -
Expired
status (Latency Note)
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Abstract
The present invention provides a thin film semiconductor element which is small in area with high on-current enough to be suitable for the power saving, miniaturization, and high definition display of a device. According to the present invention, an outer shape of a semiconductor thin film is processed and regions (a channel region, a source region, and a drain region) in the semiconductor thin film are formed by using, as masks, other element components such as a gate electrode. Specifically, ion-implanted regions are formed by implanting impurity ions into predetermined regions of the semiconductor thin film using, as a mask, the gate electrode overlapped on the thin film via an insulation film. Thereafter, the semiconductor is processed into a predetermined shape by etching using, as masks, previously formed element components such as the gate electrode.
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