Substrate processing apparatus and method of producing semiconductor device

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United States of America Patent

PATENT NO 11393675
SERIAL NO

16283609

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Abstract

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A substrate processing apparatus includes a chamber to accommodate a substrate. The apparatus includes a stage to support the substrate in the chamber. The apparatus includes an electrode disposed above the stage and containing aluminum. The electrode generates plasma from gas supplied into the chamber to form a first film on the substrate by the plasma. The apparatus further includes a second film formed on a surface of the electrode and containing aluminum and fluorine or containing aluminum and oxygen.

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Patent Owner(s)

  • KIOXIA CORPORATION

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Kitamura, Masayuki Yokkaichi Mie, JP 98 1132
Matsubara, Yuya Yokkaichi Mie, JP 16 33
Sakata, Atsuko Yokkaichi Mie, JP 92 854

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