Cyclic plasma processing

Number of patents in Portfolio can not be more than 2000

United States of America

PATENT NO 11961735
APP PUB NO 20220392765A1
SERIAL NO

17339495

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Abstract

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A method for processing a substrate includes performing a cyclic plasma process including a plurality of cycles, each cycle of the plurality of cycles including purging a plasma processing chamber including the substrate with a first deposition gas including carbon. The substrate includes a first layer including silicon and a second layer including a metal oxide. The method further includes exposing the substrate to a first plasma generated from the first deposition gas to selectively deposit a first polymeric film over the first layer relative to the second layer; purging the plasma processing chamber with an etch gas including fluorine; and exposing the substrate to a second plasma generated from the etch gas to etch the second layer.

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Patent Owner(s)

  • TOKYO ELECTRON LIMITED

International Classification(s)

Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Han, Yun Albany, US 44 91
Metz, Andrew Albany, US 30 41
Philippi, Caitlin Albany, US 3 0
Ranjan, Alok Austin, US 138 2096

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