Fin field effect transistor (FinFET) device structure with stop layer and method for forming the same

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United States of America Patent

PATENT NO 10084085
APP PUB NO 20160365446A1
SERIAL NO

14792303

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Abstract

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A FinFET device structure and method for forming the same are provided. The FinFET device structure includes a stop layer formed over a substrate and a fin structure formed over the stop layer. The FinFET device structure includes a gate structure formed over the fin structure and a source/drain (S/D) structure adjacent to the gate structure. A bottom surface of the S/D structure is located at a position that is higher than or level with a bottom surface of the stop layer.

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Patent Owner(s)

  • TAIWAN SEMICONDUCTOR MANUFACTURING CO LTD.

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Chang, Che-Cheng New Taipei, TW 401 2410
Lin, Chih-Han Hsinchu, TW 417 1908

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