Integrated circuits; method for manufacturing an integrated circuit; method for decreasing the influence of magnetic fields; memory module
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United States of America Patent
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Apr 13, 2010
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app pub date -
Jul 10, 2007
filing date -
Jul 10, 2007
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Abstract
Embodiments of the invention relate generally to integrated circuits, to a method for manufacturing an integrated circuit, to a method for decreasing the influence of magnetic fields, and to a memory module. In an embodiment of the invention, an integrated circuit having a magnetic tunnel junction is provided. The magnetic tunnel junction may include a free layer with a magnetization orientation that is selected by the application of a write current through the magnetic tunnel junction, and a retention layer that retains the selectable magnetization orientation of the free layer at temperatures below a retention temperature.
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