Semiconductor memory device with different fluorine concentrations in sub conductive layers

Number of patents in Portfolio can not be more than 2000

United States of America

PATENT NO 11990417
APP PUB NO 20230046783A1
SERIAL NO

17550062

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ATTORNEY / AGENT: (SPONSORED)

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Abstract

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A semiconductor memory device includes a first insulating layer, a first conductive layer, a first pillar, a second pillar, and a second insulating layer. The first conductive layer contains tungsten. The first conductive layer includes a first sub conductive layer and a second sub conductive layer. The first pillar and the second pillar pass through the first insulating layer and the first conductive layer. The second insulating layer divides the first insulating layer and the first conductive layer. The first sub conductive layer is in contact with the second sub conductive layer and is provided between the second sub conductive layer and the first insulating layer. A fluorine concentration in the first sub conductive layer is lower than that in the second sub conductive layer.

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Patent Owner(s)

  • KIOXIA CORPORATION

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Ikeda, Mitsuo Yokkaichi Mie, JP 31 234
Ikeno, Daisuke Yokkaichi Mie, JP 44 440
Kajita, Akihiro Yokkaichi Mie, JP 77 799
Kitayama, Hiroki Yokkaichi Mie, JP 16 61

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