Method for fabricating positionally exact surface-wide membrane masks
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United States of America Patent
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Feb 24, 2004
Grant Date -
Dec 5, 2002
app pub date -
Jun 5, 2002
filing date -
Jun 5, 2001
priority date (Note) -
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Abstract
The membrane mask is based on an SOI substrate. In an existing or subsequently produced multilayer semiconductor/insulator/semiconductor-carrier-layer substrate, the inhomogeneous mechanical stresses in the semiconductor layer, which lead to undesirable distortions, are converted at least partly into a homogenous state prior to the structuring of the semiconductor layer. In order to accomplish this, either an additional layer structure is provided on an existing SOI substrate, or a modified layer structure is provided in the fabrication of the SOI substrate, or both.
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