Method for manufacturing nitride semiconductor substrate, nitride semiconductor substrate and layered structure

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United States of America Patent

PATENT NO 11908688
SERIAL NO

17272101

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A method for manufacturing a nitride semiconductor substrate, including: a step of preparing a base substrate; a step of forming a mask layer having a plurality of openings on the main surface of the base substrate; a first step of growing a first layer whose surface is composed only of inclined interfaces; and a second step of epitaxially growing a single crystal of a group III nitride semiconductor on the first layer, making the inclined interfaces disappear, and growing a second layer having a mirror surface, wherein in the first step, at least one valley and a plurality of tops are formed at an upper side of each of the plurality of openings of the mask layer by forming a plurality of concaves on a top surface of the single crystal and making the (0001) plane disappear.

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Patent Owner(s)

Patent OwnerAddress
SUMITOMO CHEMICAL COMPANY LIMITEDTOKYO

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Yoshida, Takehiro Hitachi, JP 300 2671

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