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Abstract

A method of forming a contact hole for a semiconductor device, and a method of forming a capacitor for a semiconductor device using the same. An interlayer dielectric layer, a contact mask material layer including of a material having a high etching selectivity with respect to the interlayer dielectric layer, an anti-reflection layer, and a photoresist layer, are formed on a semiconductor substrate. A photoresist pattern is formed from the photoresist layer to expose part of the anti-reflection layer. and a flow process is performed on the photoresist pattern to expose even a smaller amount of the anti-reflection layer. The anti-reflection layer and the contact mask material layer are then etched to expose part of the interlayer dielectric layer, and the interlayer dielectric layer is etched to form a contact hole.

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