Split gate storage device including a horizontal first gate and a vertical second gate in a trench
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United States of America Patent
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May 1, 2007
Grant Date -
Jan 25, 2007
app pub date -
Jul 25, 2005
filing date -
Jul 25, 2005
priority date (Note) -
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Abstract
A split gate memory cell can include a first gate electrode and a second gate electrode. The split gate memory cell can also include a first diffusion region underlying a trench in a semiconductor substrate, wherein the trench has a sidewall, and the first diffusion region lies closer to the first gate electrode than the second gate electrode. The split gate memory cell can further include a second diffusion region lying outside the trench, wherein the second diffusion region lies closer to the second gate electrode than the first gate electrode. The split gate memory cell can still further include a charge storage layer adjacent to the sidewall of the trench, wherein the charge storage layer includes discontinuous storage elements. Methods of forming and using the split gate memory cell are also disclosed.
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