Magnetoresistive memory device and manufacturing method thereof

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United States of America Patent

PATENT NO 11410714
APP PUB NO 20210082482A1
SERIAL NO

16572329

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Abstract

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A magnetoresistive memory device includes a plurality of bottom conductive lines, a plurality of top conductive lines, a first memory cell, and a second memory cell. The top conductive lines are over the bottom conductive lines. The first memory cell is between the bottom conductive lines and the top conductive lines and includes a first magnetic tunnel junction (MTJ) stack. The second memory cell is adjacent the first memory cell and between the bottom conductive lines and the top conductive lines. The second memory cell includes a second MTJ stack, and a top surface of the second MTJ stack is higher than a top surface of the first MTJ stack.

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Patent Owner(s)

  • TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.; NATIONAL TAIWAN UNIVERSITY

International Classification(s)

Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Chung, Liang-Chor Hsinchu County, TW 15 5
Lin, Shao-Yu Taichung, TW 9 2
Liu, Chee-Wee Taipei, TW 117 1199
Luo, Zong-You Taoyuan, TW 11 14
Tsou, Ya-Jui Taichung, TW 15 14
Wang, Chih-Lin Hsinchu County, TW 78 236

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