Gas phase production of radicals for dielectrics

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United States of America Patent

PATENT NO 11469147
APP PUB NO 20220044974A1
SERIAL NO

16984618

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Abstract

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A method for depositing a dielectric material includes heating a substrate disposed in a dielectric deposition chamber; dispensing a dielectric precursor from a first showerhead towards a major outer surface of the substrate; dispensing a mixture containing oxygen and ammonia from a second showerhead towards the major outer surface of the substrate; and reacting the dielectric precursor with the mixture to deposit a layer of oxynitride dielectric material on the substrate.

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Patent Owner(s)

  • TOKYO ELECTRON LIMITED

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Dip, Anthony Austin, US 54 3047

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