Non-volatile memory device, programming method thereof, and storage device having the same

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United States of America Patent

PATENT NO 11823753
APP PUB NO 20230238066A1
SERIAL NO

18128596

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Abstract

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A method of programming a nonvolatile memory device includes performing a single-pulse program operation in a program loop, determining whether a condition is satisfied in the a program loop, and performing a multi-pulse program operation in a next program loop when the condition is satisfied. The single-pulse program operation includes applying a first program pulse and applying plural verification pulses, the multi-pulse program operation includes applying a second program pulse, applying a third program pulse, and applying plural verification pulses, and each of the second program pulse and the third program pulse has a level lower than a level of the first program pulse.

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Patent Owner(s)

  • SAMSUNG ELECTRONICS CO. LTD.

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Baek, Sejin Yongin-si, KR 3 1
Jang, Joonsuc Hwaseong-si, KR 18 67
Kim, Dongwook Seoul, KR 125 642
Kim, Hyunggon Hwaseong-si, KR 24 82
Park, Kyungsoo Busan, KR 42 286
Yun, Sangbum Seoul, KR 4 1

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