Semiconductor device and method for manufacturing the same

Number of patents in Portfolio can not be more than 2000

United States of America

PATENT NO 11296020
APP PUB NO 20210090987A1
SERIAL NO

16772263

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Abstract

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The present technology relates to a semiconductor device in which a MIM capacitive element can be formed without any process damage, and a method for manufacturing the semiconductor device. In a semiconductor device, wiring layers of a first multilayer wiring layer formed on a first semiconductor substrate and a second multilayer wiring layer formed on a second semiconductor substrate are bonded to each other by wafer bonding. The semiconductor device includes a capacitive element including an upper electrode, a lower electrode, and a capacitive insulating film between the upper electrode and the lower electrode. One electrode of the upper electrode and the lower electrode is formed with a first conductive layer of the first multilayer wiring layer and a second conductive layer of the second multilayer wiring layer. The present technology can be applied to a semiconductor device or the like formed by joining two semiconductor substrates, for example.

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Patent Owner(s)

  • SONY SEMICONDUCTOR SOLUTIONS CORPORATION

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Kawashima, Hiroyuki Kanagawa, JP 59 361
Okano, Hitoshi Kanagawa, JP 8 102

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