Photodiode and photodiode array on a II-VI material and processes for the production thereof
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United States of America Patent
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Nov 20, 1990
Grant Date -
N/A
app pub date -
Jun 7, 1989
filing date -
Jun 16, 1988
priority date (Note) -
Expired
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Abstract
Photodiode and array of photodiodes on II-VI material and their production processes. The photodiodes (48) are formed in a type P, Hg.sub.1-x Cd.sub.x Te semiconductor layer (13) with 0.ltoreq.x.ltoreq.1 deposited directly on a CdTe insulating substrate (11), having an active zone (37) of type N, a first electrical contact (47) on the semiconductor layer, a second electrical contact (45) on the active zone, and insulant (21) separating the first and second electrical contacts and an insulation or isolation trench (15), whose depth exceeds the thickness of the active zone and surrounding the latter, the first electrical contact (47) being located in the bottom (27) of the trench.
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