Method of manufacturing semiconductor device
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United States of America Patent
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Feb 12, 2008
Grant Date -
Oct 20, 2005
app pub date -
Mar 7, 2005
filing date -
Mar 31, 2004
priority date (Note) -
Expired
status (Latency Note)
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Abstract
Disclosed is a method for manufacturing a semiconductor device, comprising forming a low dielectric constant insulating film having a porous structure above a semiconductor substrate, forming a recess in the low dielectric constant insulating film, providing a burying insulating film above the low dielectric constant insulating film having the recess and in the recess, removing a the burying insulating film provided in the recess, thereby opening the recess, and burying conductive material in the recess, forming a conductive portion.
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