Data writing method for mask read only memory
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United States of America Patent
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Aug 1, 2006
Grant Date -
Apr 28, 2005
app pub date -
Oct 26, 2004
filing date -
Oct 27, 2003
priority date (Note) -
Expired
status (Latency Note)
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Abstract
A data writing method for mask read only memory using different doses of ion implantations to perform the data writing of Mask Read Only Memory. A semiconductor substrate having a plurality of gate structures is provided. The different ion implantations are performed depending on the mask from the user, thereby generating the different voltage output values. The different voltage output values are set as (00), (01), (10), and (11) for the bit output. Therefore, the present invention reduces the area of memory required for a specific data record, and lowers the production cost.
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