Laser-diode-excited laser apparatus, fiber laser apparatus, and fiber laser amplifier in which laser medium doped with one of Ho.sup.3+, Sm.sup.3+, Eu.sup.3+, Dy.sup.3+, Er.sup.3+, and Tb.sup.3+ is excited with GaN-based compound laser diode
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United States of America Patent
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Dec 26, 2006
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N/A
app pub date -
Sep 30, 2004
filing date -
May 15, 2001
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Abstract
A solid-state laser crystal constituting a laser-diode-excited solid-state laser apparatus or an optical fiber constituting a fiber laser apparatus or fiber laser amplifier is doped with one of Ho.sup.3+, Sm.sup.3+, Eu.sup.3+, Dy.sup.3+, Er.sup.3+, and Tb.sup.3+ so that a laser beam is emitted from the solid-state laser crystal or the optical fiber, or incident light of the fiber laser amplifier is amplified, by one of the transitions from .sup.5S.sub.2 to .sup.5I.sub.7, from .sup.5S.sub.2 to .sup.5I.sub.8, from .sup.4G.sub.5/2 to .sup.6H.sub.5/2, from .sup.4G.sub.5/2 to .sup.6H.sub.7/2, from .sup.4F.sub.3/2 to .sup.6H.sub.11/2, from .sup.5D.sub.0 to .sup.7F.sub.2, from .sup.4F.sub.9/2 to .sup.6H.sub.13/2, from .sup.4F.sub.9/2 to .sup.6H.sub.11/2, from .sup.4S.sub.3/2 to .sup.4I.sub.15/2, from .sup.2H.sub.9/2 to .sup.4I.sub.13/2, and from .sup.5D.sub.4 to .sup.7F.sub.5. The above solid-state laser crystal or optical fiber is excited with a GaN-based compound laser diode.
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