Enhancement mode gallium nitride power devices

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United States of America Patent

PATENT NO 8344424
SERIAL NO

13406723

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Abstract

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Enhancement mode III-nitride devices are described. The 2DEG is depleted in the gate region so that the device is unable to conduct current when no bias is applied at the gate. Both gallium face and nitride face devices formed as enhancement mode devices.

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Patent Owner(s)

  • TRANSPHORM INC.

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Mishra, Umesh Montecito, US 95 4946
Suh, Chang Soo Goleta, US 37 1587

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