Semiconductor memory device wherein wiring contact is made through an opening in an organic compound layer
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United States of America Patent
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Apr 12, 2011
Grant Date -
Nov 1, 2007
app pub date -
Apr 25, 2007
filing date -
Apr 28, 2006
priority date (Note) -
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Abstract
In the present invention, a semiconductor device that has a nonvolatile memory element to which data can be written at times other than during manufacture and in which forgery and the like performed by rewriting of data can be prevented is provided. In addition, a semiconductor device in which a high level of integration is possible is provided. Furthermore, a semiconductor device in which miniaturization is possible is provided. In a semiconductor device having a memory element that includes a first conductive layer, a second conductive layer, and an organic compound layer interposed between the first conductive layer and the second conductive layer; the second conductive layer is connected to a wiring, formed in the same way as the first conductive layer is formed, through an opening formed in the organic compound layer.
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