Enhancement mode metal-oxide-semiconductor field effect transistor
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United States of America Patent
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Nov 8, 2005
Grant Date -
Jul 15, 2004
app pub date -
Jan 9, 2003
filing date -
Jan 9, 2003
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Abstract
An implant-free enhancement mode metal-oxide semiconductor field effect transistor (EMOSFET) is provided. The EMOSFET has a III-V compound semiconductor substrate and an epitaxial layer structure overlying the III-V compound semiconductor substrate. The epitaxial material layer has a channel layer and at least one doped layer. A gate oxide layer overlies the epitaxial layer structure. The EMOSFET further includes a metal gate electrode overlying the gate oxide layer and source and drain ohmic contacts overlying the epitaxial layer structure.
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