CMOS thin film transistor comprising common gate, logic device comprising the CMOS thin film transistor, and method of manufacturing the CMOS thin film transistor
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United States of America Patent
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Oct 7, 2008
Grant Date -
Jun 22, 2006
app pub date -
Dec 16, 2005
filing date -
Dec 16, 2004
priority date (Note) -
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Abstract
A complementary metal oxide semiconductor (CMOS) thin film transistor including a common gate, a logic device including the CMOS thin film transistor, and a method of manufacturing the CMOS thin film transistor are provided. In one embodiment, the CMOS thin film transistor includes a base substrate and a semiconductor layer formed on the base substrate. A PMOS transistor and an NMOS transistor are formed on a single semiconductor layer to intersect each other, and a common gate is formed on the intersection area. In addition, a Schottky barrier inducing material layer is formed on a source and a drain of the PMOS transistor.
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