Semiconductor device and a manufacturing method of the same

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United States of America Patent

PATENT NO 7514294
SERIAL NO

11500945

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Abstract

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The semiconductor device having the structure which laminated the chip in many stages is made thin. A reforming area is formed by irradiating a laser beam, where a condensing point is put together with the inside of the semiconductor substrate of a semiconductor wafer. Then, after applying the binding material of liquid state to the back surface of a semiconductor wafer by a spin coating method, this is dried and a solid-like adhesive layer is formed. Then, a semiconductor wafer is divided into each semiconductor chip by making the above-mentioned reforming area into a division origin. By pasting up this semiconductor chip on the main surface of an other semiconductor chip by the adhesive layer of the back surface, the semiconductor device having the structure for which the semiconductor chip was laminated by many stages is manufactured.

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Patent Owner(s)

  • RENESAS ELECTRONICS CORPORATION

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Abe, Yoshiyuki Tokyo, JP 130 1284
Higashino, Tomoko Tokyo, JP 19 199
Miyazaki, Chuichi Tokyo, JP 61 662

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