Anti-reflective coating and process using an anti-reflective coating
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United States of America Patent
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Aug 2, 2005
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N/A
app pub date -
Aug 6, 1999
filing date -
Aug 6, 1999
priority date (Note) -
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Abstract
An anti-reflective coating for use in the fabrication of a semiconductor device includes a thin oxide layer and an overlying layer of silicon oxynitride. The anti-reflective layer is advantageously used in the fabrication of FLASH memory devices which include a layer of polycrystalline silicon and an underlying layer of silicon nitride. After being used to pattern the polycrystalline silicon and silicon nitride, the anti-reflective coating is removed in a solution of hot phosphoric acid with the removal taking place before the silicon oxynitride is exposed to any elevated temperatures.
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