Apparatus for chemical etching of silicon
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United States of America Patent
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-
Jan 25, 1983
Grant Date -
N/A
app pub date -
Oct 20, 1980
filing date -
Oct 20, 1980
priority date (Note) -
Expired
status (Latency Note)
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Abstract
Extremely cold gaseous nitrogen is used as a cooling medium in the highly exothermic reaction between a chemical etch solution and silicon. This greatly increases the throughput of silicon material through the etchant over prior art techniques, particularly where it is desired to maintain the temperature of the etchant solution below 25.degree. C.
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