Method for forming fin field effect transistor device structure
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United States of America
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Mar 8, 2022
Grant Date -
Oct 7, 2021
app pub date -
Apr 1, 2020
filing date -
Apr 1, 2020
priority date (Note) -
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status (Latency Note)
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Abstract
A method for forming a fin field effect transistor device structure includes forming a fin structure over a substrate. The method also includes forming a gate structure across the fin structure. The method also includes forming a source/drain recess adjacent to the gate structure. The method also includes wet cleaning the source/drain recess in a first wet cleaning process. The method also includes treating the source/drain recess with a plasma process. The method also includes wet cleaning the source/drain recess in a second wet cleaning process after treating the source/drain recess via the plasma process. The method also includes growing a source/drain epitaxial structure in the source/drain recess.
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