Power bipolar transistor
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United States of America Patent
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-
Sep 6, 1988
Issued Date -
N/A
app pub date -
Jul 16, 1987
filing date -
May 3, 1985
priority date (Note) -
Expired
status (Latency Note)
Importance
Abstract
A bipolar power transistor having a plurality of elongated emitter parts connected to a common emitter metallization is provided with a shaped resistive region between the emitter parts and the emitter metallization, in order to compensate for differences in the resistance presented by the metallization itself.
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