Mesoporous films having reduced dielectric constants
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United States of America Patent
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Apr 2, 2002
Issued Date -
N/A
app pub date -
Mar 3, 2000
filing date -
Dec 7, 1999
priority date (Note) -
Expired
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Abstract
A process provides a ceramic film, such as a mesoporous silica film, on a substrate, such as a silicon wafer. The process includes preparing a film-forming fluid containing a ceramic precursor, a catalyst, a surfactant and a solvent, depositing the film-forming fluid on the substrate, and removing the solvent from the film-forming fluid on the substrate to produce the ceramic film on the substrate. The ceramic film has a dielectric constant below 2.3, a halide content of less than 1 ppm and a metal content of less than 500 ppm, making it useful for current and future microelectronics applications.
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